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| AO4616 Complementary Enhancement Mode Field Effect Transistor General Description The AO4616 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.Standard Product AO4616 is Pb-free (meets ROHS & Sony 259 specifications). AO4616L is a Green Product ordering option. AO4616 and AO4616L are electrically identical. Features n-channel VDS (V) = 30V ID = 8.1A (VGS=10V) RDS(ON) < 20m (VGS=10V) < 28m (VGS=4.5V) p-channel -30V -7.1A (VGS = -10V) RDS(ON) < 25m (VGS = -10V) < 40m (VGS = -4.5V) S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 D2 D1 SOIC-8 S2 G1 S1 n-channel p-channel Max p-channel -30 20 -7.1 -5.6 -30 2 1.28 -55 to 150 Units V V A Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage 20 Continuous Drain TA=25C 8.1 Current A TA=70C ID 6.5 B Pulsed Drain Current IDM 30 TA=25C TA=70C Power Dissipation Junction and Storage Temperature Range PD TJ, TSTG 2 1.28 -55 to 150 W C Thermal Characteristics: n-channel and p-channel Parameter t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead t 10s Maximum Junction-to-AmbientA A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead Symbol RJA RJL RJA RJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 48 74 35 48 74 35 Max 62.5 110 60 62.5 110 40 Units C/W C/W C/W C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO4616 N-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=250A VGS=10V, VDS=5V VGS=10V, ID=8.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=6A Forward Transconductance Body-Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=8.1A IS=1A TJ=125C 1 30 16.4 20 23.4 23 0.75 1 3 1040 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 180 110 0.7 19.2 VGS=10V, VDS=15V, ID=8.1A 9.36 2.6 4.2 5.2 VGS=10V, VDS=15V, RL=1.8, RGEN=3 IF=8.1A, dI/dt=100A/s IF=8.1A, dI/dt=100A/s 4.4 17.3 3.3 16.7 6.7 21 10 1250 20 25 28 1.8 Min 30 1 5 100 3 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body-Diode Reverse Recovery Time Body-Diode Reverse Recovery Charge A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The value in any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4616 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 4V 25 20 ID (A) 15 10 VGS=3V 5 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 28 Normalized On-Resistance 26 VGS=4.5V 24 RDS(ON) (m) 22 20 18 16 14 0 5 10 15 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage VGS=10V 1.6 VGS=10V ID=8.1A 1.4 4.00E+00 10V 4.5V 3.5V 1.20E+01 ID(A) 125C 8.00E+00 25C 1.60E+01 2.00E+01 VDS=5V 0.00E+00 1.5 2 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics 2 24 1.2 VGS=4.5V ID=6A 1 50 ID=8.1A 1.0E+01 1.0E+00 40 RDS(ON) (m) 1.0E-01 IS (A) 125C 1.0E-02 30 125C 25C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF 20 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 25C 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Alpha & Omega Semiconductor, Ltd. AO4616 N-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 8 VGS (Volts) 6 4 2 0 0 4 8 12 16 20 Qg (nC) Figure 7: Gate-Charge Characteristics VDS=15V ID=8.1A Capacitance (pF) 1500 1250 Ciss 1000 750 500 250 0 0 Crss 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss 100.0 RDS(ON) limited 10.0 1ms 10ms 0.1s 1.0 TJ(Max)=150C TA=25C 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 100 1s 10s DC 100s 10s Power (W) 50 40 30 20 10 0 0.001 TJ(Max)=150C 2 TA=25C 24 ID (Amps) 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=T on/T TJ,PK=T A+PDM.ZJA.RJA RJA=62.5C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 0.1 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT NOTICE T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. AO4616 P-Channel Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-7.1A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=-4.5V, ID=-5.6A Forward Transconductance VDS=-5V, ID=-7.1A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current TJ=125C -1.4 30 20 27 29 19.6 -0.7 -1 -4.2 1573 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 319 211 6.7 30.9 VGS=-10V, VDS=-15V, ID=-7.1A 16.1 8 4.4 9.5 VGS=-10V, VDS=-15V, RL=2.2, RGEN=3 IF=-7.1A, dI/dt=100A/s 8 44.2 22.2 25.5 14.7 25 33 40 -2 Min -30 -1 -5 100 -2.7 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=-7.1A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The value in any any a given application depends user's specific board design. The current rating rating is on the t 10s 10s thermal The value in given application depends on the on the user's specific board design. The current is based based on the t thermal resistance rating. resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead R JL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. Rev 0 : July 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha Omega Semiconductor, Ltd. AO4616 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V 25 -4V 20 -ID (A) -ID(A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 16: On-Region Characteristics 40 35 30 25 VGS=-10V 20 15 10 0 5 10 15 20 25 -ID (A) Figure 18: On-Resistance vs. Drain Current and Gate Voltage 60 ID=-7.1A 1.0E+01 1.0E+00 1.0E-01 RDS(ON) (m) 125C 125C 30 1.0E-04 20 25C 1.0E-05 1.0E-06 3 4 5 6 7 8 9 10 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 21: Body-Diode Characteristics 25C -IS (A) 40 1.0E-02 1.0E-03 Normalized On-Resistance VGS=-4.5V 1.60 ID=-7.1A 1.40 VGS=-10V -3.5V VGS=-3V 20 15 10 5 0 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 17: Transfer Characteristics 125C 25C -5V 25 30 VDS=-5V RDS(ON) (m) 1.20 VGS=-4.5V ID=-5.6A 1.00 0.80 0 25 50 75 100 125 150 175 Temperature (C) Figure 19: On-Resistance vs. Junction Temperature 50 10 -VGS (Volts) Figure 20: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AO4616 P-CH TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=-15V ID=-7.1A 8 Capacitance (pF) -VGS (Volts) 2250 2000 1750 1500 1250 1000 750 500 250 0 0 4 8 12 16 20 24 28 32 -Qg (nC) Figure 22: Gate-Charge Characteristics 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 23: Capacitance Characteristics Coss Crss Ciss 6 4 2 100.0 TJ(Max)=150C, TA=25C RDS(ON) limited 0.1s 10s 100s 1ms 10ms 1.0 1s 10s 0.1 0.1 1 -VDS (Volts) Figure 24: Maximum Forward Biased Safe Operating Area (Note E) 10 100 DC Power (W) 40 TJ(Max)=150C TA=25C 30 -ID (Amps) 10.0 20 10 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 25: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=62.5C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 26: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. |
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